GENERALISED ANALYTICAL MODEL FOR CALCULATION OF CONVERSION EFFICIENCY IN SILICON SOLAR CELLS

摘要

Generalized analytical model for calculating conversion efficiency in high-performance n~+-p-p~+ and p~+-n-n~+ silicon solar cells is proposed. In this model degeneracy of charge carriers, as well as effect of band gap narrowing in under-contact highly doped n~+ and p~+ regions and photon absorption on free carriers within named regions were taken into consideration. It is shown that in the case of p~+-n-n~+ silicon solar cells non-radiative exciton recombination enhance more essential decrease in conversion efficiency than that in n~+-p-p~+ ones.