Analysing Dark Ⅰ-Ⅴ Characteristics for Improving GaAs Solar Cells Performance

摘要

A new model for the description of current-voltage characteristics of GaAs p/i solar cells is introduced. The carrier concentrations are determined in each layer and a measured transition voltage is shown to be related to carrier injection levels. High injection effects are observed as a consequence of background doping and shown to degrade cell performances.