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Chemical Mechanical Polishing of Copper-Porous Low Κ Films: Single Damascene Scheme and Related Issues

机译:铜多孔低κ膜的化学机械抛光:单金属镶嵌方案及相关问题

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摘要

Chemical Mechanical Polishing (CMP) investigations were performed on spin on dielectric (SOD) films (κ less than 2.2) in single damascene fashion by using a two layer hard mask. High electrical yield and significant capacitance reduction were observed in copper-SOD films compared to copper-oxide layers. Post CMP topography in copper-SOD films is compared with that of copper-oxide films. Importance of edge engineering in copper-lowκ integration and cap layer thickness requirements is briefly discussed.
机译:通过使用两层硬掩模,以单镶嵌方式对旋涂电介质(SOD)膜(κ小于2.2)进行了化学机械抛光(CMP)研究。与氧化铜层相比,在铜-SOD膜中观察到高的电产量和显着的电容降低。比较了铜SOD膜中的CMP后形貌与氧化铜膜的形貌。简要讨论了边缘工程在铜-低κ集成和盖层厚度要求中的重要性。

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