Character of photocurrent dependence on two-level recombination impurity concentration in an intrinsic photoconductive detector

摘要

Under conditions of nonequilibrium carriers recombination through two-level impurity and of weak optical radiation photocurrent dependence on recombination impurity concentration N in the intrinsic photoresistor with extracting contacts is theoretically analyzed. It is shown that like in single-level impurity case there may be effect of gigantic photocurrent splash upon increasing in N. It is determined that photocurrent does not saturate with increasing electric field strength for a wide section of N preceding to the point of splash unlike the single-level impurity case. It is found out that the photocurrent dependence on two-level recombination impurity concentration may have two maxima. A physical interpretation of the results obtained is given.