Method of making a semiconductor device utilizing crystal orientation dependence of impurity concentration

摘要

A technique for manufacturing a semiconductor device includes the steps of preparing a stepped substrate made of a group III-V compound semiconductor and having a flat surface exposing a (1 0 0) plane and a slanted surface exposing an (n 1 1)B plane, wherein is a real number of about 1≦n, and epitaxially growing the group III-V compounds semiconductor to form an epitaxial layer on the surface of the stepped substrate while doping p- and n-type impurities, selectively at the same time or, alternatively, under conditions such that the grown epitaxial layer has an n-type region on the slanted surface and a p-type region on the flat surface.