Schottky Barriers In Cd_(1-x)Zn_x Se Mixed Crystals With x=0.5 and x=0.55

摘要

Single crystals of Zn_xCd_(1-x) Se have been grown from the vapor phase. Au - Zn_xCd_(1-x) Se Schottky diodes with x = 0.5 and x = 0.55 were fabricated and used to determine the dependence of barrier high and uncompensated, donor density on composition. Deep levels were also investigated in these diodes using photo capacitance, which revealed the presence of two dominant levels with activation energies of 0.4-0.55 and 0.85-0.95 eV as valence band edge that were independent of the composition.