Theoretical and experimental studies of (AlN)1-x(SIC)x layer structures formed by N+ and Al+ coimplantation in 6H-SiC

摘要

The (SiC)$-1-x$/(AlN)$-x$/ binary system is widely investigated now. In reference 1 the possibility of using of ion implantation (Al$+$PLU$/ and N$+$PLU$/) in 6H-SiC under high temperatures to create (SiC)$-1-x$/(AlN)$-x$/ is first reported. The samples having been heated to 200 degrees Celsius, 400 degrees Celsius, 600 degrees Celsius and 800 degrees Celsius have been irradiated by ions, and after it the RBS-profiles of generated defects have been obtained. Then the samples have been annealed at 1200 degrees Celsius and RBS- spectra have been obtained again. The main results obtained in reference 1 and 2 are presented. In reference 2 - 4 we suggested the model of defect structure evolution in silicon carbide under ion irradiation. The aim of this work is to develop this model taking into account internal stress field.