Temporary Wafer Bonding Materials with Adjustable Debonding Properties for Use in High-Temperature Processing

摘要

Three-dimensional (3-D) integration is a very promising technology with the potential to improve device performance, increase device functionality, reduce power consumption, and decrease device size. One of the challenges in 3-D integration is processing the thinned wafer at high temperatures and in chemically stringent environments while the thinned wafer is still supported on a carrier wafer with a temporary bonding material. A new kind of spin-on materials for temporary wafer bonding has been developed to satisfy the high-temperature requirements of backside processes such as deposition, etching, curing, and plating. In addition to their high-temperature stability, these materials enable debonding from the carrier wafer by a "slide-off mechanism to eliminate risk of wafer breakage. The most important feature of these materials is that their debonding properties can be tuned to satisfy broad process requirements. This paper discusses pertinent properties of these materials, such as high coating and bonding uniformity, short debonding time, and ease of removal with industry-accepted safe solvents, and the processes developed to achieve these properties.