Recent Studies on the Electron Field Emission CHaacteristics of Diamond And Diamondlike Carbon Emitters

摘要

Selected area depositions of diamond films were successfully achieved by standard lift-off technique, using patterned SiO sub 2 layer as mask. Diamond emitters, which possess electron field emision capacity as good as idamondlike carbon electron emitter, have been fabricated. Diamond pads grown on patterned SiO sub 2/Si substrates are composed of closely packed planar grains around 400 nm in size, whereas diamond dots deposited on patterned Cr/SiO usb 2/Si substrates consist of stand alone iamond rods around 90nm in size. The turn-on field and the effective work function of te two films are vry similar to each toher, that is, E sub 0=7.6-8.0V/imvm and fai sub e=0.065-0.099eV. However, the diamond dots possess markedly better electron field emission behavior than the diamond pads, viz. emission current density achieves(J sub e) sub dot=2.0*10 sup 5 mivA/cm sup 2 for diamond dots nad attains only (J sub e) sub pad=1.4*10 sup 3mivA/cm sup 2 for diamond pads. Moreover, planar diamond electron emitters were successfully fabricated y patterning the SiO sub 2 layer coated on CVD diamonds, followed by engatively biased h sub 2-plasma etching. An emission capacity as large as (J sub e) sub plannr=2.8 V/mivm and (fai sub e) sub panar=0.031eV. Th superior emission current density of the idamond dots and planar diamond emitters is attributed to the simulataneous presence of jthe field concentration effect and the free surfaces lingin parallel with the applied field, which facilitates the transport of electrons via the surface conduction mechanism.