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Quantum Confinement Stark Effect in InGaN SQW Studied by Electric Field Modulated PL Spectra

机译：电场调制PL谱研究InGaN SQW中的量子约束斯塔克效应

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We investigated electric field modulated PL spectra of InGaN SQW in connection with the excitation light intensity dependence of PL spectra, and found clear evidence of a piezo electric field in the quantum well that is originated from lattice strain. From the sign of the electric field modulated PL signal, GaN polarity determined to be N face.

机译：我们研究了InGaN SQW的电场调制PL光谱与PL光谱的激发光强度相关性，并找到了明显的证据，证明量子阱中的压电电场源自晶格应变。根据电场调制的PL信号的符号，将GaN极性确定为N面。

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《International conference on silicon carbide, III-nitrides and related materials;ICSCIII-N'97 》|1998年|p.1307-1310|共4页
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Y. Iyechika; Y. Ono; T. Takada;
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中图分类无线电电子学、电信技术 ;
关键词
GaN; InGaN; Strained SQW; Piezo Electric Effect; Quantum Confined Stark Effect; Electric Field Modulation; Photoluminescence;

机译：氮化镓;氮化镓; SQW紧张;压电效应量子约束斯塔克效应;电场调制;光致发光;

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专利

1. Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field [J] . Anas F. Jarjour, Rachel A. Oliver, Abbes Tahraoui, Superlattices and microstructures . 2008 ,第4期

机译：垂直电场作用下单个InGaN / GaN量子点中量子限制斯塔克效应的实验和理论研究
2. Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field [J] . James W. Robinson, James H. Rice, Kwan H. Lee, Applied Physics Letters . 2005 ,第21期

机译：横向电场下单个InGaN量子点中的量子限制斯塔克效应
3. Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes [J] . Tsai Sheng-Chieh, Lu Cheng-Hsueh, Liu Chuan-Pu Nano Energy . 2016 ,第Null期

机译：压电效应对基于InGaN / GaN多量子阱的绿色发光二极管中的量子受限Stark效应的补偿
4. Quantum Confinement Stark Effect in InGaN SQW Studied by Electric Field Modulated PL Spectra [C] . Y. Iyechika, Y. Ono, T. Takada International conference on silicon carbide, III-nitrides and related materials . 1998

机译：电场调制PL光谱研究INGAN SQW的量子限制效果
5. Stark-geometry photorefractive multiple quantum well spatial light modulators. [D] . Abeeluck, Akheelesh Kumar. 2001

机译：斯塔克几何光折射多量子阱空间光调制器。
6. Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots [O] . Ebrahim Sadeghi, Elham Naghdi -1

机译：电场和磁场对锌共混对称InGaN / GaN多量子点中杂质结合能的影响
7. Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field [O] . Robinson, James W., Rice, James H., Lee, Kwan H., 2005

机译：横向电场下单个InGaN量子点中的量子限制斯塔克效应
8. Electric-field dependence of electroreflectance and photocurrent spectra at visible wavelengths in MOVPE-grown InAlGaP multiple strained quantum-well structures. [R] . Fritz, I. J., Blum, O., Schneider, R. P., 1993

机译：mOVpE生长的InalGap多应变量子阱结构中可见光波长下电反射率和光电流谱的电场依赖性。

Quantum Confinement Stark Effect in InGaN SQW Studied by Electric Field Modulated PL Spectra

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