GaSb/InGaAsSb tandem thermophotovoltaic cells for space applications

摘要

GaSb and InaGaAsSb single junction as well as tandem photovoltaic cells for thermophotovoltaic (TPV) generators were developed and investigated. LPE growth from Ga, Pb, Sb-rich melts and Zn-diffusion from the vapor phase were applied for TPV cells fabrication. The highest photoluminescent intensity from n-GaSb layers and the highest external quantum yield of 90-96