The metallization of diamond and interface reaction between titanium layer and diamond studied by aes

摘要

A Ti layer with a thickness of 250 nm is successfully deposited on the surface of a diamond thin film substrate and diamond particles using RF magnetron sputtering techniuqe.the mtallization of diamond and the interface reaction between Ti layer and diamond are promoted by the annealing treatment at a temperature range from 200 deg C to 600 deg C in high vacuum.the results of Auger depth profile analysis show that the interface layer can be thickened greatly by annealing treatment.