Strains Distribution in Biaxial Ge/CdSe Nanowire analyzed by a New Finite Element Method based on Boundary Conditions

摘要

A new finite element method based on boundary conditions is proposed here to obtain the complete strains distribution in Ge/CdSe biaxial nanowires. The results show that the strains in nanowire is essentially uniform along the nanowire axis, whereas turn to be complex in cross-section. Additionally, Raman spectrum of Ge subnanowire was calculated on base of those strain data. Raman frequency shifts in Ge subnanowire in Ge/CdSe biaxial nanowires is a good agreement with that of Raman spectrum, which confirms the validity of this model.