Previous measurements of anomalously high rates of oxygen out-diffusion in Czochralski silicon at low temperatures are confirmed in this study. We show that the time dependence is not consistent with a catalytic mechanism but indicates the long range diffusion of a stable oxygen-containing complex. The rate of generation of this complex correlates with the rate of loss of isolated atoms in the bulk of the material. These observations complement a previous study of the loss of [O_i] in the bulk and together they provide no evidence that spatial correlation of O_iatoms is significant. Possible identifications of the fast diffusing species are discussed.
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