IR Studies of Si-H Bond-Bending Vibrational Modes in SI

摘要

The IR isotope analysi of Si-H bond-strechingand bond-bending local vibrational modes in proton-implanted crystalline silicon are performed. New data on the identification of Si-H bondbending IR absorption bands are obtained. It is shown that bond-bending bands are split into two separaged groups related to vacancy-type and intersitial-type complexes as in the case of the bond-stetching bands.