EFFECT OF CERIUM SILICATE FORMATION ON THE STRUCTURAL AND ELECTRICAL PROPERTIES OF Pt/SrBi_2Ta_2O_9/CeO_2/Si CAPACITORS

摘要

We have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors of Pt/SrBi_2Ta_2O_9,(SBT)/CeO_2/Si and Pt/SBT/Ce-Si-O/Si. The cerium silicate (Ce-Si-O) layer is formed by reaction between CeO_2 thin film and SiO_2/Si substrate at 1100 °C. The SBT film on the cerium silicate layer is smoother than the SBT/CeO_2. The memory window of the SBT/Ce-Si-O increases to 1.4 V at a sweep voltage of ±5 V, whereas the memory window of the SBT/CeO_2 is 0.8 V at the same sweep voltage.