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Frequency dependence of the coercive voltage of ferroelectric thin films

机译:铁电薄膜矫镍电压的频率依赖性

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Recent progress in the measuring techniques based on a combination of a quasistatic P-V analysis, conventional dynamic hysteresis measurements, and fast pulse characterization allows to determine the coercive voltage as a function of the frequency over a range of more than seven orders of magnitude. In this review, we explain the experimental techniques and present the results for the thin film systems of SrBi{sub}2Ta{sub}2O{sub}9 (SBT) and Pb(Zr,Ti)O{sub}3 (PZT). Theoretical models of the correlation between the ferroelectric relaxation and the coercive voltage are discussed in the light of the new data.
机译:基于Quasistatic P-V分析,传统的动态滞后测量和快速脉冲表征的组合的测量技术的最新进展允许根据频率的函数确定矫顽电压超过七个数量级的函数。在本次综述中,我们解释了实验技术,并呈现了SRBI {Sub} 2TA {Sub} 20 {Sub} 9(SBT)和PB(Zr,Ti)O {Sub} 3(PZT)的薄膜系统的结果。鉴于新数据讨论铁电弛豫与矫顽电压之间的相关性的理论模型。

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