Influence of plasma parameters on the stability of fsg films prepared by biased helicon plasma cvd

摘要

Stability of fluorine doped silicon oxide (FSG) films deposited with SiF4/ SiH4/ O2/ Ar gas chemistry using helicon plasma CVD was investigated in relation to plasma parameters. We had reported that the unstableness against air exposure was caused by existence of F-Si-F bond in FSG films deposited with SiF4/ O2/ Ar gas chemistry. In this study, we made further investigation regarding film structure which affects on the stability of FSG films in relation to plasma parameters.