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Synthesizing a representative critical path for post-silicon delay prediction

机译:合成硅延迟预测的代表性关键路径

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Several approaches to post-silicon adaptation require feedback from a replica of the nominal critical path, whose variations are intended to reflect those of the entire circuit after manufacturing. For realistic circuits, where the number of critical paths can be large, the notion of using a single critical path is too simplistic. This paper overcomes this problem by introducing the idea of synthesizing a representative critical path (RCP), which captures these complexities of the variations. We first prove that the requirement on the RCP is that it should be highly correlated with the circuit delay. Next, we present two novel algorithms to automatically build the RCP. Our experimental results demonstrate that over a number of samples of manufactured circuits, the delay of the RCP captures the worst case delay of the manufactured circuit. The average prediction error of all circuits is shown to be below 2.8% for both approaches. For both our approach and the critical path replica method, it isessential to guard-band the prediction to ensure pessimism: our approach requires a guard band 30% smaller than for the critical path replica method.
机译:后硅改性的几种方法需要来自标称关键路径的复制品的反馈,其变化旨在在制造后反映整个电路的变化。对于逼真的电路,关键路径的数量可以很大,使用单个关键路径的概念太简单。本文通过引入合成代表性关键路径(RCP)的想法来克服了这个问题,这捕获了变化的这些复杂性。我们首先证明RCP对RCP的要求是它应该与电路延迟高度相关。接下来,我们提出了两种新颖的算法来自动构建RCP。我们的实验结果表明,在许多制造电路上,RCP的延迟捕获制造电路的最坏情况延迟。对于两种方法,所有电路的平均预测误差显示为低于2.8%。对于我们的方法和临界路径复制方法,它是保护乐队的预测,以确保悲观:我们的方法需要PACED频带比关键路径复制方法小30%。

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