Growth and Characterization of InGaN/GaN Double Heterostructure LEDs grown by MOCVD

摘要

We have achieved high quality InGaN epitaxial layers by atmospheric pressure MOCVD on c-plane sapphire. The indium segregation coefficient is shown to depend not only on the growth temperature, but also on the growth rate of the InGaN film. Strong band edge photoluminescence was observed for InGaN films grown at temperatures as low as 700°C with In mole fractions up to 0.20. Preliminary results are presented on blue InGaN/GaN double heterostructure LEDs.