IN SITU CHARACTERIZATION OF GROWING HYDROGENATED AMORPHOUS SILICON THIN FILMS BY P-POLARIZED LASER LIGHT REFLECTION MEASUREMENT

摘要

In situ p-polarized laser light reflection measurement was applied to the determination of optical constants of growing a-Si:H thin films as well as to the detection surface transient process in plasma CVD. Turning off the plasma induced, a slight but noticeable change in the reflectance. This reflectance change can be well explained by taking into account the surface relaxation process. When 2MHz supersonic vibration was applied to the substrate during the plasma CVD of a-Si:H, it was revealed that the refractive index and absorption coefficient of a-Si:H increased as compared with those deposited without the supersonic vibration. The result indicates that the supersonic vibration works to form densified a-Si:H network, (presumably by improving the surface reaction.)