A new method using charge pumping measurements to determine the electrical channel length variation during aging of 0.5¿m CMOS transistors

摘要

In this work, we present a new method to determine the Dito constant, which is involved in a mobility reduction law. From different types of static aging measurements, the channel length variation is calculated, using the correct value of Dito. It is thus demonstrated that negative charge trapping tends to reduce the channel length whereas positive charge trapping increases this length.