A capacitance-voltage measurement method for DMOS transistor channel length extraction

摘要

This paper reports a new measurement method for extraction of sub-micrometer channel lengths in DMOS transistors. The method is based on capacitance-voltage measurements of the gate to source, gate to p-base and gate to drain capacitances. A channel length of 0.3 /spl mu/m has been measured on DMOS transistors. Numerical device simulations and small-signal capacitance simulations support the results and the measurement principle.