首页> 外文会议>Solid State Device Research Conference, 1993. ESSDERC '93 >Linewidth and Mode Structure of Proton-Implanted Vertical Cavity Laser Diodes
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Linewidth and Mode Structure of Proton-Implanted Vertical Cavity Laser Diodes

机译:质子注入垂直腔激光二极管的线宽和模结构

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We have performed linewidth measurements on low threshold planar gain-guided vertical cavity laser diodes. Mode structure and linewidth are determined as a function of driving current for various laser structures. The linewidth shows a linear increase with inverse modal output power at a characteristic slope of about 6 MHz·mW. A mode competition effect can be made responsible for the increase of the fundamental mode linewidth at the onset of higher order transverse mode oscillation. The experimentally determined mode patterns and corresponding wavelength discriminations are in quantitive agreement with theoretical calculations.
机译:我们已经在低阈值平面增益引导的垂直腔激光二极管上进行了线宽测量。根据各种激光器结构的驱动电流确定模式结构和线宽。线宽显示了一个线性的增加与反模态输出功率在大约6 MHz×600 mW的特征斜率。在高阶横向模式振荡开始时,可​​以使模式竞争效应引起基本模式线宽的增加。实验确定的模式模式和相应的波长辨别力与理论计算在数量上一致。

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