A 6 device SOI new technology for mixed analog-digital and rad-hard applications

摘要

DMILL technology is being developped for very rad-hard analog-digital applications, such as space and military circuits or as electronics for the future generation of high energy collider (LHC, CERN, Geneva) [3]. Both CMOS and junction (JFET and bipolar) transistors are needed. A new process has been integrated, based on a 1.2 ¿m thick silicon film on insulator (SIMOX plus epitaxy), a complete dielectric isolation and low temperature process. The main feature is that six-different components are fabricated on the same wafer, taking into account the 12 volts supply voltage constraint for some analog applications. The first electrical characteristics are presented in this paper. The optimization capabilities of such an hardened CBi-CJ-CMOS technology are discussed.