首页> 外文会议>Solid State Device Research Conference, 1993. ESSDERC '93 >Raman spectroscopy measurement of local stress induced by LOCOS and trench structures in the silicon substrate
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Raman spectroscopy measurement of local stress induced by LOCOS and trench structures in the silicon substrate

机译:拉曼光谱法测量由LOCOS和硅衬底中的沟槽结构引起的局部应力

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Micro-Raman spectroscopy is used to study local mechanical stress at trench-LOCOS structures. At the trench edges the stress is compressive. The local stress surrounding trench and LOCOS is highly affected when both structures are located close to each other. The stress picture obtained from both planar and cross-sectional experiments agrees very well with stress predicted by finite element calculations.
机译:显微拉曼光谱法用于研究沟槽LOCOS结构处的局部机械应力。在沟槽边缘,应力是压缩性的。当两个结构彼此靠近时,沟槽和LOCOS周围的局部应力会受到很大影响。从平面和横截面实验获得的应力图与有限元计算预测的应力非常吻合。

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