Raman Measurements of Stress in Silicon-on-Sapphire Device Structures

摘要

Spatially resolved (about 1 micrometer) Raman scattering measurements of the Si optical phonon spectrum have been used to map the stress in silicon-on-sapphire device structures. Devices defined by an isolated island etch technique exhibit a stress relaxation extending about 1.5 micrometer from the edges of a 6-micrometer-wide Si stripe. Devices defined by a local oxidation of the Si exhibit a more uniform stress profile.