p-MOSFETs and MODFETs with a strained Si1-xGex channel layer

摘要

Si1-xGex channel p-MOSFETs and MODFETs containing Ge fractions from x = 0 to 1.0 have been fabricated in material grown at 550°C. An improved carrier mobility was recorded for a Si0.8Ge0.2 device over that for a control MOSFET fabricated in Si also grown at this low temperature. It is argued that this growth temperature is responsible for the low absolute values of mobility recorded in these devices.