Position Resolved Carrier Lifetime Measurements in Silicon Power Devices by Time Resolved Photoluminescence Spectroscopy

摘要

We present a new versatile method for measuring position resolved carrier lifetimes in semiconductor power devices, using time resolved photoluminescence spectroscopy. The experimental results obtained at ASCRs and silicon diodes are in good agreement to what is expected from the doping profile. In addition the effects of lifetime reducing processes, e.g. gold diffusion, e^{¿} - or H⁺ -irradiation can be clearly demonstrated. The resolution in position is only limited by carrier diffusion.