Low frequency noise in quantum-well GexSi1-x PMOSFET's

摘要

This paper describes the low frequency noise behavior of a quantum-well GexSi1-x p-channel MOSFET. Two noise mechanisms were involved in this buried channel device. At room temperature, generation-recombination (g-r) noise dominates, while at very low temperature, flicker (l/f) noise becomes important.