AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8ÃÂÃÂ1018cm-3) a broad minimum existed from 385ÃÂðC to 500ÃÂðC, in which the specific contact resistance, rc, was about 10-7 ÃÂÿcm2. The lowest value of 7ÃÂÃÂ10-8 ÃÂÿcm2 for n-InP occurred after RTA for 20 sec. at 450ÃÂðC. For p-InP (Zn:5ÃÂÃÂ1018 cm-3) the lowest value of rc, 7ÃÂÃÂ10-6 ÃÂÿcm2, was obtained for AuZn without any Ni. Metallurgical investigations indicated, that low rc values were associated with interfacial reactions and the formation of stable barrier-lowering metal-phosphides.
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机译：在快速热退火（RTA）系统中，研究了AuGeNi和AuZnNi金属化成n-和p-InP与退火温度的关系。对于n-InP（S：8ƒƒÂ—10 18 cm -3 ），存在一个广泛的最小值，从385°C到500°C，其中特定的接触电阻，r c ，约为10 -7 ƒƒÃ¢Â¢cm 2 。 RTA持续20秒钟后，n-InP的最小值为7×10 --8 -8 γ-cm 2 。在450°C的温度下。对于p-InP（Zn：5ƒƒÂ–10 18 cm -3 ）r c 的最小值为7对于不含任何Ni的AuZn，获得ƒÂƒ–10 -6 âcm 2 。冶金研究表明，较低的r c 值与界面反应以及稳定的降低势垒的金属磷化物的形成有关。
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