Parasitic transients induced by floating substrate effect and bipolar transistor on SOI technologies

摘要

In this paper, we are dealing with consequences of the existence of parasitic bipolar[1] and kink effect[2] on transients occuring in SOI digital circuits. The two effects described below have been studied on NMOS transistors on SOI technology. To facilitate the acquisition of the different transients, we have used large transistors (7000¿m for the first, and 100 ¿m for the second) with nominal gate length (1.4¿m). To characterize the first effect, we have used NMOS transistors with body ties. These ties are realized with P+ implantation in the N+ source diffusions, one body tie per ten microns of channel width. The kink effect induced transients have been characterized on usual NMOS transistors without tie.