Analytical Device Model including Velocity Overshoot Effect for Ultra Small MOSFETs

摘要

A new analytical device model applicable to deep sub-micron MOSFETs is proposed. The new pseudo two-dimensional model includes velocity overshoot effect by the use of the extended drift-diffusion (EDD) model. Calculated current voltage characterisitcs agree well with the reported device characteristics of deep sub-micron MOSFETs. The model is found to be applicable to small geometry MOSFETs down to L=0.1 ¿m.