Study of self-heating influence on device performance of 0.1μm SOI MOSFETs including velocity overshoot

摘要

Drain current degradation due to the self-heating effect in sub-0.1μm SOT MOSFETs is investigated, focussing on the comparison with bulk devices. It was found that the difference of the current degradation between SOT and bulk device could be reduced- with shortening the gate length into deep submicrometer region. This is because that the velocity overshoot effect dominates the drain current. In this situation, the carrier velocity is independent of lattice temperature.