Random Telegraph Signal Noise: A Probe for Hot-Carrier Degradation Effects in Submicrometer MOSFET's?

摘要

The channel hot-carrier (CHC) degradation of submicron p-and nMOST's is studied using Random Telegraph Signal (RTS) and low frequency (lf) noise. As will be demonstrated, the changes observed in the RTS fractional amplitude ¿ID/ID are similar as the changes in the drain current ID, i.e., for pMOST's an increase is observed after CHC stress, while a reduction is observed for nMOST's. These observations are discussed in view of existing models for hot-carrier degradation. Finally, the correlation between the RTS behaviour and the If noise will be examined briefly.