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MATERIALS AND MANUFACTURING ISSUES IN MEMORY MODULES-WAFER THINNING

机译:内存模块晶圆变薄中的材料和制造问题

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With the memory clock speed, density, and performance continually being pushed upward relentlessly, packaging and assembly for high-density memory devices such as flash memory, dynamic random access memory (DRAM), and static random access memory (SRAM) are changing to thin, multi-stack chip scale packages (CSP). This paper presents an update of the market and technical trends in the application of packages for memory devices. In particular, the thinning process of wafers to achieve thin memory devices for very thin chip scale packages such as VFBGA is described in detail. The material and performance requirements for the packages and module are discussed based on manufacturing process and reliability concerns.
机译:随着内存时钟速度,密度和性能的不断提高,诸如闪存,动态随机存取存储器(DRAM)和静态随机存取存储器(SRAM)之类的高密度存储设备的封装和组装正在变薄。 ,多堆栈芯片级封装(CSP)。本文介绍了存储设备封装应用中的市场和技术趋势的最新动态。特别地,详细描述了晶片的减薄工艺,以实现用于非常薄的芯片级封装(例如,VFBGA)的薄存储器件。基于制造过程和可靠性问题,讨论了包装和模块的材料和性能要求。

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