Effect of strain and growth temperature on in incorporation and properties of high power laser diodes in MOVPE grown (In, Ga) (As,P)/GaAs

摘要

For adjustment laser emission wavelength the knowledge about the active zone is improtant. At high-power laser diodes emitting in the wavelength region between 800 nm and 1017 nm strained InGaAs(P) is usually employed as active zone. Calibration of composition by growing thick layers that allow a analysis is based on the assumption of a strain independent In incorporation. This assumption does not hold for MOVPE growth.