Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

摘要

Pendeo-epitaxy of individual GaN andAl_xGa_(1-x)N films and single- and multi-layerheterostructures of these materials have been achieved on acolumnar GaN seed layer using metallorganic vapor phaseepitaxy. These structures have been characterized usingscanning electron microscopy and atomic force microscopy.The RMS roughness value of the grown side wall plane (112-bar0) of these structures was 0.099 nm.