AC LED / LED INTEGRATION OF GALLIUM NITRIDE LEDS WITH ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE DEVICES ON SILICON SUBSTRATES FOR AC LEDS

摘要

A method for fabricating an epitaxial structure includes providing a heterojunction stack on a substrate 102, 202, 302, 402 and a first side of the substrate, and depositing a GaN light emitting diode stack 134 on a second side of the substrate. Forming a step. The heterojunction stack includes an undoped gallium nitride (GaN) layer and a doped aluminum gallium nitride (AlGaN) layer on the undoped GaN layer. GaN light emitting diode stack 134 includes n-type GaN layer 136 over the substrate, GaN / Indium gallium nitride (MQW) multiple quantum well (MQW) structures 138 over the n-type GaN layer, n-type GaN P-type AlGaN layer 140 over the / InGaN MQW structure, and p-type GaN layer 142 over the p-type AlGaN layer.