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In-situ Electrical Resistivity Measurement of MgOcentre dotAl_2O_3 Coating under Neutron Irradiation

机译:中子辐照下MgOcentre dotAl_2O_3涂层的原位电阻率测量

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Ceramic coatings on the surface of structural materials such as 316SS have been considered for electrical insulators and tritium permeation barriers in fusion reactor designs. MgOcentre dotAl_2O_3is one of the most promising materials as a coating material from a point of high electrical resistivity and so on. In this report, the electrical resistivity of a MgOcentre dotAl_2O_3 coating on 316SS was investigated under neutron irradiation with the JMTR (Japan Materials Testing Reactor) by in-situ electrical resistivity measurement. The specimen was irradiated at 360deg C in a He atmosphere. Radiation Induced Conductivity (RIC) was observed at the beginning of reactor. The electrical resistivity of the coating before neutron irradiation decreased from 1 X 10~11OMEGAcentre dot cm to 2 X 10~8 OMEGAcentre dotcm with increase reactor power. The electrical resistivity of the coating under neutron irradiation decreased again from 2 X 10~8 OMEGAcentre dot cm to 5 X 10~4 OMEGAcentre dot cm above 1 X 10~19 n/cm~2 (En>1 MeV). It did not recover up to unirradiated level. The electrical resistivity of the coating after neutron irradiation was about 2 X 10~6 OMEGAcentre dot cm. It was clear that Radiation Induced Electrical Ddgradation (RIED) in the MgOcentre dotAl_2O_3 coating was recognized above a fluence of about 1 X 10~20 n/cm~2 (En>1MeV).
机译:在聚变反应堆设计中,已考虑将结构材料(例如316SS)表面上的陶瓷涂层用作电绝缘体和tri渗透屏障。从高电阻率等观点出发,MgOcentre dotAl_2O_3是最有前途的涂层材料之一。在本报告中,通过JMTR(日本材料试验反应堆)在中子辐射下通过原位电阻率测量研究了316SS上MgOcentre dotAl_2O_3涂层的电阻率。在He气氛中在360℃下照射样品。在反应器开始时观察到辐射诱导电导率(RIC)。随着反应堆功率的增加,中子辐照前涂层的电阻率从1 X 10〜11 OMEGA中心点cm降低到2 X 10〜8 OMEGA中心点cm。在中子辐照下,涂层的电阻率再次从2 X 10〜8 OMEGA中心点cm降低到1 X 10〜19 n / cm〜2以上的5 X 10〜4 OMEGA中心点cm(En> 1 MeV)。它没有恢复到未辐照的水平。中子辐照后涂层的电阻率为约2 X 10〜6 OMEGAcentpoint cm。清楚的是,在约1 X 10〜20 n / cm〜2(En> 1MeV)的注量以上,可以识别出MgOcentre dotAl_2O_3涂层中的辐射诱导电降解(RIED)。

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