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In-situ Electrical Resistivity Measurement of MgOcentre dotAl_2O_3 Coating under Neutron Irradiation

机译:中子辐射下的Mgocentre dotal_2O_3涂层的原位电阻率测量

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Ceramic coatings on the surface of structural materials such as 316SS have been considered for electrical insulators and tritium permeation barriers in fusion reactor designs. MgOcentre dotAl_2O_3is one of the most promising materials as a coating material from a point of high electrical resistivity and so on. In this report, the electrical resistivity of a MgOcentre dotAl_2O_3 coating on 316SS was investigated under neutron irradiation with the JMTR (Japan Materials Testing Reactor) by in-situ electrical resistivity measurement. The specimen was irradiated at 360deg C in a He atmosphere. Radiation Induced Conductivity (RIC) was observed at the beginning of reactor. The electrical resistivity of the coating before neutron irradiation decreased from 1 X 10~11OMEGAcentre dot cm to 2 X 10~8 OMEGAcentre dotcm with increase reactor power. The electrical resistivity of the coating under neutron irradiation decreased again from 2 X 10~8 OMEGAcentre dot cm to 5 X 10~4 OMEGAcentre dot cm above 1 X 10~19 n/cm~2 (En>1 MeV). It did not recover up to unirradiated level. The electrical resistivity of the coating after neutron irradiation was about 2 X 10~6 OMEGAcentre dot cm. It was clear that Radiation Induced Electrical Ddgradation (RIED) in the MgOcentre dotAl_2O_3 coating was recognized above a fluence of about 1 X 10~20 n/cm~2 (En>1MeV).
机译:在结构材料表面上的陶瓷涂层如316SS的电气绝缘体和融合反应器设计中的氚渗透屏障。 Mgocentre Dotal_2O_3IS作为来自高电阻率的涂层材料中最有前途的材料之一。在本报告中,通过原位电阻率测量,在中子辐射下研究了316SS上的Mgocentre dotal_2O_3涂层的电阻率。通过原位电阻率测量,研究了JMTR(日本材料检测反应器)。将样品在He气氛中在360deg C处辐照。在反应器开始时观察到辐射诱导的电导率(RIC)。中子辐射前涂层的电阻率从1×10〜11 omeGentre点Cm至2×10〜8 OmegActoreDOTCM降低,随着反应器功率增加。中子辐射下涂层的电阻率再次从2×10〜8ωemgActordrecm到5×10〜4 OmegActordre cm高于1×10〜19 n / cm〜2(en> 1 mev)。它没有恢复到未放射的水平。中子辐射后涂层的电阻率为约2×10〜6ωωd厘米。显然,辐射诱导的迁移诱导的型电力直流_2O_3涂层中的电力DDGRADATION(RIED)以上识别出约1×10〜20n / cm〜2(EN> 1MEV)的流量。

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