Optimization of the MOVPE growth of ZnSe ZnCdSe alloy and related heterostructures using various zinc precursor adducts

摘要

Abstract: Stimulated blue light emission has now been producedvia electrical injection through a p-n junction usingMBE grown II-VI wide bandgap semiconductors. This isnot yet possible using the MOVPE technique, due to thesomewhat unsuccessful realization of p-type doping ofZnSe. Microgun pumped lasers (where injection isachieved using an array of microtips as an electrongun) could be an alternative solution, but requiresstructures of high crystalline quality based onZnSe/ZnCdSe. In this perspective, we have studied theMOVPE growth of ZnSe layers and ZnCdSe alloys andZnCdSe based heterostructures using two different zincprecursor adducts: triethylamine-dimethylzinc (TEA:DMZ)and tetramethylmethylenediamine dimethylzinc(TMMD:DMZ). The growth conditions have beeninvestigated and the solid composition versus gas phasecomposition has been studied for both adducts. Thestructural properties of ZnSe layers below the criticalthickness have been studied versus the initial growthconditions and optimal growth conditions are proposed.Particular attention has been devoted to theinvestigation of the spectroscopic properties of theheterostuctures in view of the characterization of theabruptness of the heterointerfaces. Photoluminescence,reflectance and photoreflectance experiments will bepresented.!16