Distributions of Ge and Si in SiGe quantum wells and wires, grown with high Ge gas phase concentrations (>40%), were measured by highly spatially resolved X-ray analysis in a STEiM. Quantitative information of the X-ray scan profiles was gained via a computer decon volution routine. The profiles were asymmetrical and the Ge contents in the wells and wires were found to be only a fraction of that in the gas phase. These observations indicate that Si surface segregation and diffusion play an important part in the growth process of the quantum wires.
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