Quantum thin wire manufacturing method using patterned substrate

摘要

When the quantum thin wire is manufactured by using the conventional technology, the shape of the quantum thin wire becomes a crescent shape, and thus the light constraining efficiency in the horizontal direction is decreased, and the size thereof changes as the upper side is raised during the production of the multi-layer quantum thin wire.;In the present invention, a Ga (gallium) atom is more diffused than an Al (aluminum) atom, and Al _x Ga _lx As / Al _y is formed by organometallic chemical vapor deposition (MOCVD) on a V or U-shaped grooved GaAs substrate. By growing epitaxial layers of Ga _ly As (x y), not only can you control the thickness and width of quantum fine lines, but also change the x or y values to produce quantum fine lines with various widths and energy gaps. I can make it. In addition, by using the present invention, it is possible to obtain a quantum thin wire having a rectangular shape, and therefore, it is possible to manufacture a quantum thin wire having excellent characteristics such as increasing the light confinement efficiency in the horizontal direction.