Characterization of RBSOA of high power bipolar transistors using a nondestructive tester

摘要

Reverse-bias safe operating area (RBSOA) of high power Darlington transistors are characterized using a 120A/1000V nondestructive reverse-bias second breakdown tester designed and fabricated at VPI&SU. Elaborate RBSOA characteristics are generated with different forward/reverse base drives and collector current levels. The effects of elevated case temperature and second-base drive on RBSOA of four-terminal Darlington devices are also discussed.