The study of optical properties of Zn_1-xMN_xSe thin films grown by MOCVD on GaAs substrates

摘要

A series of Zn_1-xMn_xSe thin film samples with different Mn compositions were grown by metal-organic chemical vapor deposition. X-ray diffraction measurements indicated the good crystallinity of samples. Two emission peaks were observed in photoluminescence (PL) spectra close to the band edge for the samples. The temperature dependence of PL shows the change of the relative intensity of the two emission peaks, which is attributed to the competition between band-to-band excitonic transitions and transitions of localized excitons bound to Mn-induced impurity bound states. Time-resolved PL measurements and PL under different excitation power also support this analysis. Further investigation implies that the impurity bound states are associated with Mn incorporation.