Advanced GaAs and Si Integrated Circuits for Microwave Frequency Synthesis

摘要

A prototype microwave E/F band direct synthesis frequency source is described. The frequency source is housed in a small module weighing only 185 grams which contains two GaAs analogue MMICs and two ECL Si digital ICs together with low frequency and DC control circuitry. Frequency selection is achieved via a serial data link. The module has a 34% tuning bandwidth centred on 3.25 GHz and a channel spacing of 500 KHz. An output power of +10 dBm ± 1 dB is obtained over the band.