Millimetre Wave Low Noise E-Plane Balanced Mixers Incorporating Planar MBE GaAs Mixer Diodes

摘要

Planar GaAs Mott mixer diodes have been made for use in novel E-plane balanced mixers at 35 and 85 GHz. Single sideband noise figures of 6 dB at 35 GHz and 7.5 dB at 85 GHz (including 1 dB I.F. contribution) have been achieved. Both devices and circuits are suitable for low cost, high volume applications.