This paper deals with the modelling and analysis of power MOSFETs for high switching frequency synchronous buck converters targeting voltage regulator module (VRM) applications. The aim is to come up with a modelling approach that enables accurate performance predictions of the power MOSFETs in the switched-circuit. A survey on power MOSFET models is given that provides a basic classification of relevant modelling techniques for circuit simulation. A model is then selected and experimentally validated over a wide range of switching conditions. Also, the loss assessment in a multi-chip module is presented to illustrate the use of a method for comprehensive quantification of loss mechanisms. Overall, the modelling approach helps establish roadmap targets for future device and circuit technology developments.
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