Ultra-high frequency operation of mesoscopic field-effect transistor with one-dimensional quantum ballistic channel

摘要

We have considered high-frequency operation of field-effect transistor with one-dimensional quantum chaneel through which electrons travel ballistically between the source and the drain. Resonant behavior is found in the frequency dependence of input conductance, transconductance and power gain, with the characteristic frequency being determined by the electron transit time under the gate. Output conductance is shown to become negative when the dc voltage applied to the drain exceeds a threshold value.